SI8469DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 8V 4.6A 1.8W 64mOhms @ 4.5
PDF
/
Buying Options
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
Inventory: 41776
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 64mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 780mW Ta 1.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 780mW
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 64m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 4V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 22 ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 5V
DS Breakdown Voltage-Min 8V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
SI8469DB-T2-E1+price,SI8469DB-T2-E1+datasheet,SI8469DB-T2-E1+in stock,buy+SI8469DB-T2-E1,finder+SI8469DB-T2-E1,SI8469DB-T2-E1+tutorials,SI8469DB-T2-E1+download