Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 780mW Ta 1.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 4V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 700mV
Drain to Source Breakdown Voltage 8V