SI8457DB-T1-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
VISHAY SI8457DB-T1-E1 MOSFET, P CHANNEL, -12V, -10.2A, MICRO FOOT-4
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.5104
≥1 USD $0.5104
≥10 USD $0.4356
≥100 USD $0.30272
≥500 USD $0.23635
≥1000 USD $0.192113
Inventory: 1143
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Technical
Threshold Voltage -900mV
Continuous Drain Current (ID) -10.2A
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 6V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 19m Ω @ 3A, 4.5V
FET Type P-Channel
Power Dissipation-Max 1.1W Ta 2.7W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Resistance 15mOhm
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series TrenchFET?
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Number of Pins 4
Package / Case 4-UFBGA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 21 Weeks
Alternative Model
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