SI8451DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 20V 10.8A 13W 80mohm @ 4.5V
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 80mOhm
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PBGA-B6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.77W Ta 13W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.77W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10.8A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -10.8A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 15A
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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