SI8407DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 6-MICRO FOOT?CSP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 5.8A 2X2 6-MFP
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-MICRO FOOT?CSP
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 27mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.47W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.47W
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 350μA
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 520 ns
Continuous Drain Current (ID) -8.2A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.8A
Drain to Source Breakdown Voltage -20V
Dimensions
Height 355.6μm
Length 2.3876mm
Width 2.0066mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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