SI8406DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
VISHAY SI8406DB-T2-E1 MOSFET Transistor, N Channel, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5456
≥1 USD $0.5456
≥10 USD $0.46552
≥100 USD $0.323488
≥500 USD $0.252595
≥1000 USD $0.205313
Inventory: 5486
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 43 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA
Number of Pins 6
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2.77W Ta 13W Tc
Element Configuration Single
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 8V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Dimensions
Height 310μm
Length 1.5mm
Width 1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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