DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 40A
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 11m Ω @ 14A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.5W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ