Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage -30V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -11A
Turn-Off Delay Time 115 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 19m Ω @ 11A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.5W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ