Avalanche Energy Rating (Eas) 32 mJ
Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.8W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ