Drain to Source Breakdown Voltage -8V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 5.2A
Turn-Off Delay Time 75 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 33m Ω @ 5.2A, 4.5V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.3W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ