SI4480DY-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 6A 8-SOIC
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.165932
≥1 USD $0.165932
≥10 USD $0.156541
≥100 USD $0.147679
≥500 USD $0.139327
≥1000 USD $0.131432
Inventory: 1100
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4mm
Length 5mm
Height 1.55mm
Technical
Rds On Max 35 mΩ
Drain to Source Resistance 35mOhm
Drain to Source Breakdown Voltage 80V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 52 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 80V
Rise Time 12.5ns
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V
FET Type N-Channel
Turn On Delay Time 12.5 ns
Power Dissipation 2.5W
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Number of Channels 1
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 35mOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2016
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Weight 186.993455mg
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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