SI4462DY-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 1.15A 8-SOIC
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 1153
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Packaging Cut Tape (CT)
Published 2017
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 17mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.3W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 480mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.15A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Drain to Source Resistance 480mOhm
Rds On Max 480 mΩ
Nominal Vgs 4 V
Dimensions
Height 1.5494mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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