Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -5.9A
Turn-Off Delay Time 130 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5.9A Ta
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 23m Ω @ 7.9A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.1W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ