Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 60m Ω @ 4.5A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.14W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ