SI3447CDV-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 12V 7.8A 6TSOP
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Buying Options
Total Price: USD $5.73
Unit Price: USD $5.72755
≥1 USD $5.72755
≥10 USD $4.69965
≥100 USD $4.5524
≥500 USD $4.4061
≥1000 USD $4.25885
Inventory: 1094
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 19.986414mg
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3W Tc
Element Configuration Single
Power Dissipation 2W
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 36mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 6V
Current - Continuous Drain (Id) @ 25°C 7.8A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V
Rise Time 40ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -7.8A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage 12V
Input Capacitance 910pF
Drain to Source Resistance 36mOhm
Rds On Max 36 mΩ
Nominal Vgs -1 V
Dimensions
Height 1mm
Length 3.05mm
Width 1.65mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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