SI3434DV-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 4.6A 6-TSOP
PDF
/
Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
≥10000 USD $0.26885
Inventory: 1336
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Nominal Vgs 600 mV
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Threshold Voltage 600mV
Continuous Drain Current (ID) 4.6A
Turn-Off Delay Time 40 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Rise Time 45 ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Vgs(th) (Max) @ Id 600mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs 34m Ω @ 6.1A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 21 ns
Power Dissipation 1.14W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.14W Ta
Number of Elements 1
Pin Count 6
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 34mOhm
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series TrenchFET?
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 6
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
Recommended For You
SI3434DV-T1-E3+price,SI3434DV-T1-E3+datasheet,SI3434DV-T1-E3+in stock,buy+SI3434DV-T1-E3,finder+SI3434DV-T1-E3,SI3434DV-T1-E3+tutorials,SI3434DV-T1-E3+download