Power Dissipation-Max 2W Ta 4.1W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.295nF
Drain to Source Resistance 19.5mOhm
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ