SI2327DS-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 200V 0.49A 1.25W 2.35ohm @ 10V
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 1097
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Radiation Hardening No
Technical
Nominal Vgs -4.5 V
Drain to Source Breakdown Voltage -200V
Drain-source On Resistance-Max 2.45Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage -4.5V
Continuous Drain Current (ID) -490mA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 380mA Ta
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 2.35 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type P-Channel
Power Dissipation 750mW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 750mW Ta
Number of Elements 1
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series TrenchFET?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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