SI2311DS-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 8V 3A SOT23
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Buying Options
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥10 USD $0.114
≥100 USD $0.1102
≥500 USD $0.1064
≥1000 USD $0.10355
≥10000 USD $0.09215
Inventory: 1109
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 710mW Ta
Element Configuration Single
Power Dissipation 710mW
Turn On Delay Time 18 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 4V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -3A
Gate to Source Voltage (Vgs) 8V
Input Capacitance 970pF
Drain to Source Resistance 45mOhm
Rds On Max 45 mΩ
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
Compliance
RoHS Status ROHS3 Compliant
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