Drain to Source Resistance 160mOhm
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 160mOhm @ 2A, 10V
Element Configuration Single
Power Dissipation-Max 1.25W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ