Drain to Source Resistance 214mOhm
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 1.06A
Turn-Off Delay Time 48 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 10V
Vgs(th) (Max) @ Id 950mV @ 250μA
Rds On (Max) @ Id, Vgs 150mOhm @ 1.06A, 4.5V
Element Configuration Single
Power Dissipation-Max 236mW Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ