Drain to Source Resistance 1.2Ohm
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 6V
Continuous Drain Current (ID) -350mA
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V
Element Configuration Single
Power Dissipation-Max 150mW Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ