Drain-source On Resistance-Max 0.64Ohm
Gate to Source Voltage (Vgs) 5V
Continuous Drain Current (ID) 480mA
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 6V
Vgs(th) (Max) @ Id 800mV @ 250μA
Rds On (Max) @ Id, Vgs 640m Ω @ 400mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 190mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ