Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 50 mJ
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 540m Ω @ 900mA, 5V
Transistor Application SWITCHING
Turn On Delay Time 9.3 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 3.1W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ