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IRLL110TRPBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 1.5A SOT223
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Buying Options
Total Price: USD $0.26
Unit Price: USD $0.25662
≥1 USD $0.25662
≥10 USD $0.207171
≥100 USD $0.180289
≥500 USD $0.290409
≥1000 USD $0.24724
Inventory: 898
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Radiation Hardening No

Dimensions

Width 3.7mm
Length 6.7mm
Height 1.8mm

Technical

Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 50 mJ
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 10V
Threshold Voltage 2V
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 16 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±10V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Rise Time 47 ns
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 540m Ω @ 900mA, 5V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.3 ns
Case Connection DRAIN
Power Dissipation 2W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 3.1W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-G3
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Resistance 540mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2017
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 250.212891mg
Number of Pins 4
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 8 Weeks

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