Drain-source On Resistance-Max 0.2Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.7A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 5V
Transistor Application SWITCHING
Turn On Delay Time 9.3 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 3.1W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ