Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.1A
Turn-Off Delay Time 9.6 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 500m Ω @ 3.1A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 25W Tc
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ