Drain to Source Resistance 280mOhm
Drain to Source Breakdown Voltage -50V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.9A
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.9A Tc
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 280mOhm @ 5.7A, 10V
Turn On Delay Time 8.2 ns
Element Configuration Single
Power Dissipation-Max 42W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ