IRFR010TRL
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 50V 8.2A DPAK
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 1108
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.2A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 8.2A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 33A
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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