IRFPG50
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 6.1A TO-247AC
PDF
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Buying Options
Total Price: USD $3.54
Unit Price: USD $3.53875
≥1 USD $3.53875
≥10 USD $2.9032
≥100 USD $2.81295
≥500 USD $2.72175
≥1000 USD $2.6315
Inventory: 1166
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Current Rating 6.1A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Power Dissipation 190W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.1A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Input Capacitance 2.8nF
Drain to Source Resistance 2Ohm
Rds On Max 2 Ω
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.31mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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