IRFL210
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 0.96A SOT223
PDF
/
Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 1148
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package SOT-223
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta 3.1W Tc
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 960mA Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 960mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 140pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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