IRFDC20PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 320MA 4-DIP
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Buying Options
Total Price: USD $1.92
Unit Price: USD $1.9184
≥1 USD $1.9184
≥10 USD $1.58928
≥100 USD $1.265176
≥500 USD $1.070555
≥1000 USD $0.908354
≥3000 USD $0.862937
Inventory: 1167
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.4Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 320mA
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 320mA Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 320mA
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 350pF
Drain to Source Resistance 4.4Ohm
Rds On Max 4.4 Ω
Nominal Vgs 10 V
Dimensions
Height 3.3782mm
Length 6.2738mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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