IRFDC20
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 320MA 4-DIP
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 320mA
Number of Channels 1
Power Dissipation-Max 1W Ta
Power Dissipation 1.3W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 320mA Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 320mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 350pF
Drain to Source Resistance 4.4Ohm
Rds On Max 4.4 Ω
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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