IRFD9014
RoHS
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Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 1.1A 4-DIP
PDF
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675
Inventory: 1164
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -1.1A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Power Dissipation 1.3W
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 660mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 63ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) -1.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Input Capacitance 270pF
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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