IRFD9010PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 50V 1.1A 4-DIP
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Buying Options
Total Price: USD $1.17
Unit Price: USD $1.1704
≥1 USD $1.1704
≥10 USD $0.96008
≥100 USD $0.746592
≥500 USD $0.632826
≥1000 USD $0.515504
≥3000 USD $0.485285
Inventory: 1087
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Technology MOSFET (Metal Oxide)
Current Rating -1.1A
Power Dissipation-Max 1W Tc
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 6.1 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 580mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) -1.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 50V
Input Capacitance 240pF
Drain to Source Resistance 350mOhm
Rds On Max 500 mΩ
Dimensions
Height 3.3782mm
Length 6.2738mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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