Drain to Source Resistance 3Ohm
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 370mA
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 370mA Ta
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3Ohm @ 220mA, 10V
Element Configuration Single
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ