IRFD220
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 800MA 4-DIP
PDF
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Buying Options
Total Price: USD $0.46
Unit Price: USD $0.4576
≥1 USD $0.4576
Inventory: 959
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Current Rating 800mA
Pin Count 4
Configuration Single
Number of Channels 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 7.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800m Ω @ 480mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 800mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain to Source Breakdown Voltage 200V
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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