IRFD113PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP
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Buying Options
Total Price: USD $1.29
Unit Price: USD $1.2936
≥1 USD $1.2936
≥10 USD $1.07184
≥100 USD $0.852896
≥500 USD $0.77
Inventory: 2398
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Feedback Cap-Max (Crss) 25 pF
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.8Ohm
Drain Current-Max (Abs) (ID) 0.8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 800mA
Turn-Off Delay Time 15 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 800m Ω @ 800mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 10 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDIP-T2
Pin Count 2
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2017
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case 4-DIP (0.300, 7.62mm)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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