Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 900V
Avalanche Energy Rating (Eas) 250 mJ