IRFBF20S
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 1.7A D2PAK
PDF
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Buying Options
Total Price: USD $1.24
Unit Price: USD $1.2445
≥1 USD $1.2445
≥10 USD $1.02125
≥100 USD $0.9899
≥500 USD $0.9576
≥1000 USD $0.9253
Inventory: 1279
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Current Rating 1.7A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 54W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Input Capacitance 490pF
Drain to Source Resistance 8Ohm
Rds On Max 8 Ω
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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