IRFBF20LPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 1.7A TO-262
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Buying Options
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Inventory: 1099
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK
Weight 2.387001g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 54W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Input Capacitance 490pF
Drain to Source Resistance 8Ohm
Rds On Max 8 Ω
Dimensions
Height 9.65mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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