IRFBF20L
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 1.7A TO-262
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Dimensions
Width 4.83mm
Length 10.67mm
Height 9.65mm
Technical
Rds On Max 8 Ω
Drain to Source Resistance 8Ohm
Input Capacitance 490pF
Drain to Source Breakdown Voltage 900V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.7A
Turn-Off Delay Time 56 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Rise Time 21ns
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8Ohm @ 1A, 10V
FET Type N-Channel
Turn On Delay Time 8 ns
Element Configuration Single
Power Dissipation-Max 3.1W Ta 54W Tc
Number of Channels 1
Current Rating 1.7A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 900V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2016
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Weight 2.387001g
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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