IRFBE30PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB
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Buying Options
Total Price: USD $1.9
Unit Price: USD $1.9008
≥1 USD $1.9008
≥10 USD $1.528736
≥100 USD $1.257784
≥500 USD $1.064254
≥1000 USD $0.903003
≥3000 USD $0.857859
Inventory: 2415
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Radiation Hardening No
Dimensions
Width 4.7mm
Length 10.41mm
Height 9.01mm
Technical
Nominal Vgs 4 V
Rds On Max 3 Ω
Drain to Source Resistance 3Ohm
Recovery Time 720 ns
Input Capacitance 1.3nF
Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 4.1A
Turn-Off Delay Time 82 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
FET Type N-Channel
Turn On Delay Time 12 ns
Power Dissipation 125W
Current 48A
Element Configuration Single
Power Dissipation-Max 125W Tc
Voltage 800V
Number of Channels 1
Number of Elements 1
Current Rating 4.1A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 800V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 3Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Weight 6.000006g
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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