IRFBC30PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
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Buying Options
Total Price: USD $1.03
Unit Price: USD $1.0296
≥1 USD $1.0296
≥10 USD $0.825792
≥100 USD $0.679448
≥500 USD $0.613466
Inventory: 17187
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 2.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Voltage 600V
Power Dissipation-Max 74W Tc
Element Configuration Single
Current 44A
Power Dissipation 74W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 660pF
Recovery Time 810 ns
Drain to Source Resistance 2.2Ohm
Rds On Max 2.2 Ω
Nominal Vgs 4 V
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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