IRFB9N65A
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 8.5A TO-220AB
PDF
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Buying Options
Total Price: USD $1.15
Unit Price: USD $1.1476
≥1 USD $1.1476
≥10 USD $0.9424
≥100 USD $0.91295
≥500 USD $0.8835
≥1000 USD $0.85405
Inventory: 22426
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 8.5A
Number of Channels 1
Power Dissipation-Max 167W Tc
Element Configuration Single
Power Dissipation 167W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1417pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 8.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
Input Capacitance 1.417nF
Drain to Source Resistance 920mOhm
Rds On Max 930 mΩ
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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