Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ
Drain to Source Resistance 500mOhm
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -6.7A
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Element Configuration Single
Power Dissipation-Max 3.7W Ta 43W Tc