IRF9630PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB
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Buying Options
Total Price: USD $1.39
Unit Price: USD $1.3904
≥1 USD $1.3904
≥10 USD $1.113904
≥100 USD $0.88264
≥500 USD $0.748158
≥1000 USD $0.609453
≥3000 USD $0.573734
Inventory: 1080
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Dimensions
Width 4.7mm
Length 10.41mm
Height 9.01mm
Technical
Nominal Vgs -4 V
Rds On Max 800 mΩ
Drain to Source Resistance 800mOhm
Recovery Time 300 ns
Input Capacitance 700pF
Drain to Source Breakdown Voltage -200V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) -6.5A
Turn-Off Delay Time 28 ns
Fall Time (Typ) 24 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 800mOhm @ 3.9A, 10V
FET Type P-Channel
Turn On Delay Time 12 ns
Power Dissipation 74W
Element Configuration Single
Power Dissipation-Max 74W Tc
Number of Channels 1
Number of Elements 1
Current Rating -6.5A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -200V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 800MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Weight 6.000006g
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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