Drain to Source Resistance 600mOhm
Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -6.8A
Turn-Off Delay Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V
Turn On Delay Time 9.6 ns
Element Configuration Single
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ