IRF720STRL
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V 3.3A D2PAK
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 190 mJ
DS Breakdown Voltage-Min 400V
Pulsed Drain Current-Max (IDM) 13A
Continuous Drain Current (ID) 3.3A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 400V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1.8 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 225
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2017
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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