IRF640STRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 18A D2PAK
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Buying Options
Total Price: USD $1.87
Unit Price: USD $1.8656
≥1 USD $1.8656
≥10 USD $1.54704
≥100 USD $1.231032
Inventory: 1192
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 9.65mm
Length 10.67mm
Height 4.83mm
Technical
Avalanche Energy Rating (Eas) 580 mJ
Pulsed Drain Current-Max (IDM) 72A
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 45 ns
Fall Time (Typ) 36 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 51 ns
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Case Connection DRAIN
Power Dissipation 130W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 130W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Resistance 180mOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2015
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.437803g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount, Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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