Drain to Source Resistance 800mOhm
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.2A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Turn On Delay Time 7.2 ns
Element Configuration Single
Power Dissipation-Max 3W Ta 50W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ